T 1983/17 of 07.09.2021
- European Case Law Identifier
- ECLI:EP:BA:2021:T198317.20210907
- Date of decision
- 7 September 2021
- Case number
- T 1983/17
- Online on
- 6 October 2021
- Petition for review of
- -
- Application number
- 03784733.2
- IPC class
- H01L 21/20
- Language of proceedings
- English
- Distribution
- No distribution (D)
- Download
- Decision in English
- OJ versions
- No OJ links found
- Other decisions for this case
- -
- Abstracts for this decision
- -
- Application title
- STRAIN COMPENSATED SEMICONDUCTOR STRUCTURES AND METHODS OF FABRICATING STRAIN COMPENSATED SEMICONDUCTOR STRUCTURES
- Applicant name
- Cree, Inc.
- Opponent name
- -
- Board
- 3.4.03
- Headnote
- -
- Relevant legal provisions
- European Patent Convention Art 56 1973Rules of procedure of the Boards of Appeal Art 12(4)Rules of procedure of the Boards of Appeal Art 13(2)Rules of procedure of the Boards of Appeal Art 25(1)Rules of procedure of the Boards of Appeal Art 25(2)
- Keywords
- Inventive step - main request, first auxiliary request (no)
Late-filed second auxiliary request - admitted (no)
First and second auxiliary requests filed with the grounds of appeal - admitted (no) - Catchword
- -
- Cited cases
- -
- Citing cases
- -
Order
For these reasons it is decided that:
The appeal is dismissed.